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VBM165R05SE 产品详细

产品简介:

Product introduction: VBsemi's VBM165R05SE is a single N-channel power field effect transistor (FET) manufactured using SJ_Deep-Trench technology. It is packaged in TO220 and has reliable performance and efficient power handling capabilities. Suitable for various application scenarios requiring single N-channel FET.

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产品参数:


Detailed parameter description:
- Voltage parameters: VDS (drain-source voltage) is 650V, VGS (gate-source voltage) is ㊣30V, and threshold voltage (Vth) is 3.5V.
- Current parameters: At VGS=10V, the drain-source resistance (RDSon) is 780m次, and the maximum drain current (ID) is 5A.

领域和模块应用:




Applicable fields and modules:
1. Industrial electronics: suitable for high-efficiency power converters, inverters and motor drives.
2. Automotive electronics: It can be used in motor control and battery management systems of electric vehicles.
3. Solar energy and renewable energy: suitable for energy conversion equipment such as solar inverters, photovoltaic power generation systems and wind power generation devices.
4. Power supply: high-performance power modules for servers, communication base stations and industrial equipment.
5. Medical equipment: It can be used in high-voltage power supply control modules such as medical imaging equipment, X-ray generators and CT scanners.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

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* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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