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VBM165R05 产品详细

产品简介:


**Product Introduction:**

VBM165R05 is a Single N field effect transistor launched by the VBsemi brand with high performance and stability. This product is manufactured using Plannar technology and has high drain-source voltage and moderate drain current, making it suitable for switching power supplies in power management modules.

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产品参数:

### Detailed parameter description

- **Type:** Single N MOSFET
- **Maximum drain-source voltage (VDS):** 650V
- **Maximum Gate-Source Voltage (VGS):** ㊣30V
- **Threshold voltage (Vth):** 3.5V
- **Gate-source resistance (RDS(on)) @ VGS=10V:** 2000 m次
- **Maximum drain current (ID):** 5A
- **Technology:** Plannar

领域和模块应用:

### Applicable fields and modules

1. **Power management module:** VBM165R05 has a high drain-source voltage and moderate drain current, and is suitable for switching power supplies, DC-DC converters and other applications in power management modules. Its low gate-source resistance and high drain current enable efficient power conversion.

2. **Electric vehicle control module:** In the electric vehicle control module, VBM165R05 can be used as a switching device to drive and control the motor. Its high drain-source voltage and moderate drain current make it suitable for the control of high-voltage circuits and high-power circuits.

3. **Industrial Control:** This product has a wide range of applications in the field of industrial control and can be used as switching devices for power switches, driver controls and other high-voltage circuits, with high reliability and stability.

4. **Power Tools:** In power tools, VBM165R05 can be used as a switching device to drive and control the motor. Its high drain-source voltage and moderate drain current meet the power and efficiency requirements of power tools.

The above is an introduction to the product VBM165R05, detailed parameter descriptions, and examples of applicable fields and modules in the form of paragraphs.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

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