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VBM165R04SE 产品详细

产品简介:

Product introduction:
VBsemi's VBM165R04SE is a single N-channel field effect transistor (Single N) product. Its key features include a drain-source voltage (VDS) of 650V, a gate-source voltage (VGS) of 30V, a threshold voltage (Vth) of 3.5V, and a drain current (ID) of 4A. It adopts SJ_Deep-Trench technology and is packaged as TO220.

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产品参数:


Detailed parameter description:
- Drain-source voltage (VDS): 650V
- Gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance (m次) at VGS=10V: 1000
- Drain current (ID): 4A
- Technology: SJ_Deep-Trench
-Package:TO220

领域和模块应用:

Examples of application areas and modules:
1. Low-power power module: Due to the low drain current and high on-resistance of VBM165R04SE, it is suitable for the design of low-power power modules, such as household power adapters, mobile phone chargers, etc.
2. Power tool control: In some power tool control systems that require lower power but are stable and reliable, VBM165R04SE can be used as a power switch module, such as handheld electric drills, electric shavers, etc.
3. Industrial automation sensors: For industrial automation applications that require electric drive for sensors, VBM165R04SE can provide stable power conversion to ensure the accuracy and reliability of the sensors.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

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* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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