产品简介：
VBM1602 is a single N-channel field effect transistor using Trench technology, designed for high power control and driving applications. Its main parameters include:
- Rated drain-to-source voltage (VDS) is 60V, suitable for high power applications.
- The maximum gate-source voltage (VGS) is 20V, providing a wide operating range.
- The threshold voltage (Vth) is 3V, suitable for medium voltage control circuits.
- The on-resistance is 3mΩ at VGS=4.5V and 2mΩ at VGS=10V. It has low on-resistance and is suitable for high-power power conversion.
- Maximum drain current (ID) of 270A with high power handling capability.
- Using Trench technology, it has excellent electrical characteristics and reliability.
VBM1602 is suitable for high-power control and drive applications, including motor drive modules, power conversion modules, welding equipment control modules and other fields.
文件下载
领域和模块应用：
Application examples:
1. **Motor drive module**: VBM1602 can be used as a power switching device in the motor drive module to achieve high-power drive and control of the motor, and is suitable for industrial automation, electric vehicles and other fields.
2. **Power conversion module**: Due to its high power characteristics, VBM1602 can be used in power conversion modules to achieve power conversion of different voltages and frequencies, and is suitable for high-power electronic equipment, communication base stations and other fields.
3. **Welding equipment control module**: As a power switching device, VBM1602 can be used in the welding equipment control module to achieve high-power control and drive of welding equipment and improve welding efficiency and quality.
*请注意：以上只是示例应用场景，具体的应用取决于系统设计的要求和条件。在使用该器件时，请查阅其数据手册以获取详细的技术规格和特性
立即下载
中文
English
返回上级页面
