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VBM15R08 产品详细

产品简介:


VBM15R08 is a Single N structure power MOSFET with a rated drain-source voltage of 500V, low threshold voltage, and a manufacturing process suitable for Plannar technology. Its TO220 package makes it suitable for a variety of medium power applications.

VBM15R08 is suitable for scenarios that require medium power tolerance, low threshold voltage and moderate drain current, including power management modules, LED lighting drivers, power tool drivers and other fields.

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产品参数:

parameter:
- Structure type: Single N
- Rated drain-source voltage (VDS): 500V
- Gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.4V
- Drain-source resistance (VGS=10V): 1100 m次
- Drain current (ID): 8A
- Technology: Plannar
Package: TO220

领域和模块应用:

for example:
1. Power management module:
Since VBM15R08 has a high rated drain-source voltage and low drain current, it is suitable as a power switching element in a power management module to implement switching and regulating functions of the power supply.

2. LED lighting driver:
In LED lighting drivers, power MOSFETs are needed to drive and control LED lamp beads. The VBM15R08's low threshold voltage and moderate current capability make it an ideal choice in LED lighting drivers.

3. Power tool driver:
In power tool drivers, power MOSFETs are required to achieve precise control and drive of the motor. The VBM15R08's TO220 package and Plannar technology make it suitable for power switching modules in power tool drives.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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