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VBM155R13 产品详细

产品简介:

VBM155R13 is a Single N structure power MOSFET with a rated drain-source voltage of 550V, low threshold voltage and moderate drain current. Manufactured using Plannar technology, the TO220 package is suitable for scenarios that require medium power handling capability, low threshold voltage and moderate drain current, including industrial power modules, high-frequency power inverters, motor drives and other fields.

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产品参数:

parameter:
- Structure type: Single N
- Rated drain-source voltage (VDS): 550V
- Gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.2V
- Drain-source resistance (VGS=10V): 600 m次
- Drain current (ID): 13A
- Technology: Plannar
Package: TO220

领域和模块应用:

for example:
1. Industrial power module:
VBM155R13 has a high rated drain-source voltage and moderate drain current, making it suitable for use as a power switching element in industrial power modules to control and regulate the power output of industrial equipment.

2. High frequency power inverter:
In high-frequency power inverters, power MOSFETs are required to achieve high-frequency switching control of the power supply. The TO220 package and Plannar technology of VBM155R13 make it suitable for power switching modules in high-frequency power inverters.

3. Motor driver:
In motor drivers, power MOSFETs are required to achieve precise control and drive of the motor. The VBM155R13's low threshold voltage and moderate drain current make it suitable for power switching modules in motor drives.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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