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VBM155R02 产品详细

产品简介:

This product is a Single N structure power MOSFET with low drain current (ID) and moderate drain-source voltage (VDS), and is suitable for low-power switching modules.

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产品参数:

parameter:
- Polarity: Single N
- Maximum drain-source voltage (VDS): 550V
- Maximum gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3V
- On-resistance (m次) when VGS=10V: 3000
- Maximum drain current (ID): 2A
- Technology: Plannar
Package: TO220

领域和模块应用:


This product is suitable for the following areas and modules:
1. Low power switch module:
Due to its low drain current (ID) and moderate drain-source voltage (VDS), it is suitable for low-power switching modules, such as small power switches, LED lighting dimmers and electronic switch controllers, etc., which can be implemented Efficient switching and control of small equipment.

2. Power management module:
It is suitable for power management modules, such as small power adapters, battery charge managers and voltage regulators, etc., which can provide stable power output and precise voltage regulation to meet the requirements for power management accuracy and stability.

3. Motor drive module:
It is suitable for small motor drive modules, such as fan controllers, small electric vehicle drivers and steering gear controllers, etc. It can provide reliable motor drive and precise speed control to meet the operation needs of small electric equipment.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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