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VBM1403 产品详细

产品简介:

The VBM1403 is a single N-channel MOSFET suitable for high-performance power control and switching applications. Features a maximum drain-source voltage (VDS) of 40V, a maximum drain current (ID) of 160A, and low drain-source resistance (RDS(on)). The package is TO220, suitable for various designs of power switch modules.

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产品参数:

Product model: VBM1403
Brand: VBsemi
parameter:
- Type: Unipolar N-type
- Rated drain-source voltage (VDS): 40V
- Rated gate-source voltage (VGS): ㊣20V
- Threshold voltage (Vth): 3V
- Drain-source resistance (m次) at VGS=4.5V: 15
- Drain-source resistance (m次) at VGS=10V: 3
- Drain current (ID): 160A
- Technology: Trench
Package: TO220

领域和模块应用:


This VBM1403 product is suitable for the following fields and modules:
1. Power module: Due to its high drain current and low drain-source resistance, it can be used to design high-performance switching power supply modules such as DC-DC converters and AC-DC converters. DC) converter.
2. Electric vehicle controller: Suitable for designing electric vehicle controller modules to control the drive motor of electric vehicles and provide power output with high efficiency and reliability.
3. Industrial motor drive: Can be used to design industrial motor drive modules, such as factory automation equipment, robotic arms and conveyor belt drives, to provide reliable power output and precise speed control.
4. Power switch: Suitable for designing power switch modules, such as switch control and power distribution of power systems, such as industrial power switches and UPS (uninterruptible power supply) systems.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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