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VBM1307 产品详细

产品简介:

VBsemi's VBM1307 is a single-channel N-channel field effect transistor (Single N) manufactured using the Trench process. Its main parameters include: maximum drain-source voltage (VDS) of 30V, maximum gate-source voltage (VGS) of ±20V, threshold voltage (Vth) of 1.7V, and different gate-source On-resistance under voltage, etc. The device is packaged in TO220 and is suitable for various applications.

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产品参数:

parameter:
- Type: Unipolar N-type
- Rated drain-source voltage (VDS): 30V
- Rated gate-source voltage (VGS): ㊣20V
- Threshold voltage (Vth): 1.7V
- Drain-source resistance (m次) at VGS=4.5V: 10
- Drain-source resistance (m次) at VGS=10V: 7
- Drain current (ID): 70A
- Technology: Trench
Package: TO220

领域和模块应用:

This VBM1307 product is suitable for the following areas and modules:
1. Power module: Due to its high drain current and low drain-source resistance, it can be used to design high-performance switching power supply modules such as DC-DC converters and AC-DC converters. DC) converter.
2. Electric vehicle controller: Suitable for designing electric vehicle controller modules to control the drive motor of electric vehicles and provide power output with high efficiency and reliability.
3. Industrial automation: Can be used in industrial automation fields, such as robot control systems, automated production lines and process controllers, to provide reliable power control and regulation.
4. Power tools: Suitable for designing high-power power tool modules, such as electric drills, electric hammers and electric saws, to provide reliable working performance and long-lasting service life.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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