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VBM1302 产品详细

产品简介:

VBM1302 is a single N-channel field effect transistor with a drain-source voltage (VDS) of 30V, a gate-source voltage (VGS) of ±20V, a threshold voltage (Vth) of 1.7V, and different gate-source voltages. Drain-source resistance (RDS(on)) at source voltage. Furthermore, it has a drain current (ID) capacity of 140A, is manufactured using trench technology, and is packaged in TO220.

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产品参数:

**parameter:**
- Single N-channel field effect transistor
- VDS(V): 30
-VGS(㊣V): 20
-Vth(V): 1.7
- Drain-source resistance (m次) at VGS=4.5V: 3
- Drain-source resistance (m次) at VGS=10V: 2
-ID(A): 140
- Technology: Groove
**Package:** TO220

领域和模块应用:

**Application examples:**
1. **Power switch module:** The high drain current capacity and low on-resistance of VBM1302 make it very suitable for use in power switch modules. For example, it can be used in power switches in industrial equipment, household appliances and other fields to achieve reliable power control and efficient energy conversion.

2. **Automotive Electronic Modules:** Since VBM1302 has high drain current capacity and low on-resistance, it can also be used in automotive electronic modules. For example, it can be used in modules such as automobile ignition systems and electric vehicle battery management systems to ensure stable power output and reliable system performance.

3. **Industrial automation control module:** The device's TO220 package and low switching loss supported by trench technology make it very suitable for use in industrial automation control modules. For example, it can be used in industrial control equipment such as PLCs (programmable logic controllers) and frequency converters to achieve efficient energy conversion and precise control functions.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

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