产品参数:
parameter:
- Type: Single N-channel field effect transistor
- Nominal drain-source voltage (VDS): 30V
- Nominal gate-source voltage (VGS): ㊣20V
- Threshold voltage (Vth): 1.7V
- On-resistance RDS(on) (VGS=4.5V): 2m次
- On-resistance RDS(on) (VGS=10V): 1m次
- Maximum drain current (ID): 260A
- Technology: Trench (trench structure)
Package: TO220
领域和模块应用:
Application introduction:
The VBM1301 is suitable for high power switching and current control applications. Due to its high drain current and low on-resistance characteristics, it can be widely used in the following fields and corresponding modules:
1. Electric vehicles: VBM1301 can be used as a power switching device in electric vehicles or electric bicycles to control the high power output and current regulation of the motor.
2. Power supply module: In the power supply system, VBM1301 can be used to switch the power switch in the switching power supply module to achieve efficient power conversion and stable output.
3. Welding equipment: Used as power switches and current controllers in industrial welding equipment, VBM1301 can provide stable current output and efficient energy conversion.
4. High-performance power amplifier: As part of the power amplifier, VBM1301 can be used in sound systems, stage lighting and other fields to achieve high power output and sound quality clarity.
5. Industrial automation: In industrial control systems, VBM1301 can be used in high-power current control modules to achieve efficient control and regulation of machinery and equipment.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性