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VBM1254N 产品详细

产品简介:

The VBM1254N is a single N-channel metal oxide semiconductor field effect transistor (MOSFET) produced by VBsemi. The device has the following detailed parameters:

- VDS(V): 250V - Drain-source voltage
- VGS(±V): 20V - Gate-source voltage
- Vth(V): 3.5V - Threshold voltage
- VGS=10V(mΩ): 41mΩ - On-resistance when gate-source voltage is 10V
- ID (A): 50A - Drain current
- Technology: Trench - Made using trench technology
- Package: TO220 - TO220 package form

VBM1254N MOSFET is suitable for applications requiring high power, high voltage and efficient energy conversion, including power modules, motor drive modules and industrial electronic modules.

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产品参数:

Product model: VBM1254N
Brand: VBsemi
Parameters: Single N
VDS(V): 250
VGS(㊣V): 20
Vth(V): 3.5
VGS=10V(m次): 41
ID(A): 50
Technology: Trench
Package: TO220

领域和模块应用:

VBM1254N is suitable for a variety of fields and modules, such as:

1. Power module: Due to its high drain-source voltage (250V) and high drain current (50A) capabilities, VBM1254N is suitable for high-power power modules such as switching power supplies, inverters and DC-DC converters. Its low on-resistance (41mΩ) and the advantages of trench technology manufacturing enable it to achieve efficient energy conversion and stable performance.

2. Motor drive module: This device is suitable for motor drive modules such as motor controllers, frequency converters and DC motor drivers. Its high voltage and current capability and low on-resistance can meet the requirements of motor drive modules for high power and efficient energy conversion.

3. Industrial electronic modules: VBM1254N is suitable for industrial electronic modules, such as industrial automation control systems, power transmission and distribution systems. Its stable characteristics and fast switching speed enable stable operation in industrial environments and enable efficient energy conversion.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

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* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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