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VBM1208N 产品详细

产品简介:

VBM1208N is a single N-channel MOSFET, suitable for use in power modules, motor drive modules, charge and discharge modules and other fields. It provides stable and reliable power switching functions for these modules, thus promoting the development and application of various power and electronic equipment. . Its high rated drain-source voltage and drain current meet the needs of a variety of application scenarios, while the TO220 package makes it easy to install and dissipate heat.

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产品参数:

parameter:
- Type: Single N-channel MOSFET
- Rated drain-source voltage (VDS): 200V
- Gate-source voltage (VGS) (㊣V): ㊣20V
- Threshold voltage (Vth): 3V
- Drain-source on-resistance (m次) at VGS=10V: 58m次
- Rated drain current (ID): 35A
- Technology: Trench structure (Trench)
Package: TO220

领域和模块应用:


Example application:
1. **Power module**:
VBM1208N is suitable for switching power supplies, DC-DC converters and inverters in power modules. Due to its high rated drain-source voltage and drain current, it can be used in power systems of various power levels, such as industrial power supplies, telecommunications equipment and home appliances.

2. **Motor drive module**:
In the motor drive module, VBM1208N can be used as a power switching element in the motor controller. Its low drain-source on-resistance and high rated drain-source voltage allow it to withstand high voltages and high currents during motor startup while having low conduction losses, improving system efficiency.

3. **Charge and discharge module**:
In charge and discharge modules, VBM1208N can be used as power switches in battery management systems and chargers. Its high rated drain-source voltage and drain current characteristics allow it to withstand high voltages and currents during battery charging and discharging, and has a low conduction voltage drop, helping to improve charging and discharging efficiency and battery life. .
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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