产品参数:
parameter:
- Type: Single N-channel MOSFET
- Rated drain-source voltage (VDS): 200V
- Rated gate-source voltage (VGS): ㊣20V
- Threshold voltage (Vth): 3V
- Drain-source on-resistance (m次) when gate-source voltage is 4.5V: 310m次
- Drain-source on-resistance (m次) when gate-source voltage is 10V: 270m次
- Drain current (ID): 10A
- Technology: Trench Gate Structure
-Package: TO220
领域和模块应用:
The following are some areas and corresponding modules that this product is applicable to:
1. Power management module:
VBM1203M can be used to design various low-power power management modules, such as power switches, voltage regulators and battery charge and discharge controllers. Its moderate drain-source voltage and low threshold voltage make it widely used in portable electronic devices, smart homes and industrial automation.
2. Motor control module:
Due to its moderate on-resistance and moderate drain-source voltage, the VBM1203M is suitable for a variety of mid-power motor control module designs. It can be used in motor drives and inverters in industrial machinery, robots, electric vehicles and other fields.
3. Lighting control module:
In LED lighting and traditional lighting control modules, VBM1203M can be used as a switching device to design dimmers and lighting controllers. Its low on-resistance and reliable performance make it widely used in indoor and outdoor lighting systems, including home lighting, commercial lighting and landscape lighting.
4. Automotive electronic modules:
In automotive electronic systems, VBM1203M can be used to design modules such as automotive lighting, power window control, seat adjustment, and engine control. Its high drain-source voltage and stable performance make it an important component in automotive electronic systems.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性