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VBM1202N 产品详细

产品简介:

VBM1202N is a single-channel N-type MOS field effect transistor (Single N MOSFET), suitable for circuits up to 200V. Its gate-source voltage (VGS) is ±20V, threshold voltage (Vth) is 4V, drain-source on-resistance is 17mΩ at VGS=10V, and drain current (ID) is rated at 80A. Adopting Trench technology, it has excellent performance and stability. The package form is TO220, which is convenient for installation and heat dissipation.

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产品参数:

parameter:
- MOSFET type: Single N
- Rated drain-source voltage (VDS): 200V
- Rated gate-source voltage (VGS): ㊣20V
- Threshold voltage (Vth): 4V
- Drain-source on-resistance (m次) at VGS=10V: 17
- Drain current (ID): 80A
- Technology: Trench
Package: TO220

领域和模块应用:

**Application introduction and examples:**
1. **Electric vehicle motor drive module:** VBM1202N is suitable for electric vehicle motor drive modules, such as motor controllers and inverters. Its high rated drain-source voltage and drain current can meet the power output and control requirements of electric vehicles, and the TO220 package helps heat dissipation and wiring.

2. **Industrial high-voltage power module:** In the industrial field, VBM1202N can be used in high-voltage power modules, such as power inverters and DC-DC converters. Its high voltage and current characteristics can support the needs of industrial equipment for power conversion and control. The TO220 package is suitable for installation and heat dissipation needs in industrial environments.

3. **Solar Inverter Module:** Solar inverters need to handle high voltage and large current, and the parameters of VBM1202N meet these requirements. It can be used in solar inverter modules to convert DC power generated by solar panels into AC power. The TO220 package is suitable for installation in outdoor environments and can effectively dissipate heat to ensure the stable operation of the inverter.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

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