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VBM1201M 产品详细

产品简介:

The VBM1201M is a single N-channel MOSFET suitable for a variety of power management and power control applications. Its high drain-source voltage rating, low threshold voltage, and high on-current make it perform well in a variety of applications.

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产品参数:

parameter:
- Type: Single N-channel MOSFET
- Rated drain-source voltage (VDS): 200V
- Rated gate-source voltage (VGS): ㊣20V
- Threshold voltage (Vth): 3V
- Drain-source on-resistance (m次) when gate-source voltage is 10V: 110m次
- Drain current (ID): 30A
- Technology: Trench Gate Structure
-Package: TO220

领域和模块应用:

The following are some areas and corresponding modules that this product is applicable to:

1. Power converter module:
VBM1201M can be used to design switching power supplies and DC-DC converter modules. Its high drain-source voltage and low on-resistance give it advantages in efficient energy conversion. For example, DC-DC converter modules for electric vehicle charging stations or solar inverters.

2. Motor drive module:
Due to its high drain-source voltage and high on-current, the VBM1201M is suitable for the design of motor driver modules. DC motor drive modules that can be used in industrial automation equipment, household appliances, and power tools.

3. Power switch module:
Among power switching modules, VBM1201M can be used to design efficient switching power supplies, inverters and power amplifiers. Its low threshold voltage and high on-current make it excellent in high-frequency switching applications, such as switching power supply modules for communication equipment and industrial control systems.

4. LED lighting module:
For LED lighting modules, VBM1201M can be used as a key component of the LED driver module. Its high voltage handling capability and low on-resistance enable it to provide stable current output for indoor and outdoor LED lighting systems.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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