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VBM1152N 产品详细

产品简介:

The VBM1152N is a single N-type Trench technology MOSFET with 150V drain-source voltage (VDS), ±20V gate-source voltage (VGS), 3V threshold voltage (Vth), and 18 milliohms on-resistance. It is capable of withstanding a maximum drain current (ID) of 70 amps. The device is packaged in TO220.

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产品参数:

parameter:
- Type: Single N type
- VDS(V): 150
- VGS(㊣V): ㊣20
- Threshold voltage (V): 3
- On-resistance (miohms) at VGS=10V: 18
- Maximum drain current (ID) (amps): 70
- Technology: Trench
Package: TO220

领域和模块应用:

**Application Introduction:**
1. **Power Switch Module**: Since VBM1152N has moderate drain current and on-resistance, it is suitable for various power switch modules, including low to medium power DC-DC converters and power management systems.

2. **LED lighting**: This device can be used as a power switch module in LED lighting drive circuits to ensure the high efficiency and reliability of LED lamps.

3. **Automotive Electronics**: In the field of automotive electronics, VBM1152N can be used in modules such as battery management systems, electric vehicle drivers and on-board charging devices to achieve efficient power management and control.

4. **Industrial Control**: Due to its reliability and moderate current carrying capacity, this device is suitable for power switching modules in industrial control systems such as PLC (Programmable Logic Controller) and sensor controllers.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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