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VBM11518 产品详细

产品简介:

VBM11518 is a single N-type power field effect transistor launched by the VBsemi brand, which is suitable for various high-voltage and high-power power applications. The product features high rated drain-source voltage and rated drain current, as well as low threshold voltage and drain-source resistance, providing stable and reliable performance.

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产品参数:

parameter:
- Type: Single N type
- Rated drain-source voltage (VDS): 150V
- Nominal gate-source voltage (VGS): ㊣20V
- Threshold voltage (Vth): 3V
- Drain-source resistance (m次) at VGS=10V: 16
- Rated drain current (ID): 70A
- Technology: Trench
Package: TO220

领域和模块应用:

for example:
1. Industrial power module: VBM11518 is suitable for switching power supplies and inverters in industrial power modules to provide stable power output and support the operation of various industrial equipment.
2. High-voltage power module: Due to its high rated drain-source voltage, VBM11518 can be used in high-voltage power modules, such as medical equipment, radar systems and other applications that require high-voltage stable power supply.
3. Automotive electronic modules: In the field of automotive electronics, VBM11518 can be used in modules such as vehicle chargers and electric vehicle battery management systems to provide high-power power conversion and management functions.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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