VBM112MR04 - VBsemi MOS管制造商

VBM112MR04 产品详细

描述
参数
应用
技术支持

产品简介：

Product introduction:
VBM112MR04 is a Single N-type field effect transistor produced by VBsemi and is suitable for various electronic applications. With high voltage tolerance and stability, it can provide reliable performance in different application scenarios.

Detailed parameter description:
- VDS(V): Maximum drain-source voltage is 1200V.
- VGS(±V): Gate-source voltage range is ±30V.
- Vth(V): Threshold voltage is 3.5V.
- VGS=10V(mΩ): When the gate-source voltage is 10V, the drain-source resistance is 3500 mΩ.
- ID (A): Maximum drain current is 4A.
- Technology: Using Plannar technology.

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产品参数：

Product model: VBM112MR04
Brand: VBsemi
Parameters: Single N
VDS(V): 1200
VGS(㊣V): 30
Vth(V): 3.5
VGS=10V(m次): 3500
ID(A): 4
Technology: Planner
Package: TO220

领域和模块应用：

Examples of applicable fields and modules:
1. Industrial power supply: VBM112MR04 can be used in inverters and power management modules in industrial power supplies to achieve efficient power conversion and stable power output.
2. Solar power generation: Due to its high voltage tolerance and reliability, this model is suitable for inverter modules in solar power generation systems to convert solar energy into electrical energy.
3. High-performance electric vehicles: In the field of electric vehicles, VBM112MR04 can be used as a driver module for electric vehicles, providing efficient power output and reliable performance.

*请注意：以上只是示例应用场景，具体的应用取决于系统设计的要求和条件。在使用该器件时，请查阅其数据手册以获取详细的技术规格和特性

技术支持：

* 如果您对产品有任何问题，请填写表格提交，我们会24小时内回复您

MOSFET

VBM112MR04 产品详细

产品简介：

文件下载

下载PDF 文档

产品参数：

领域和模块应用：

技术支持：

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