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VBM110MR05 产品详细

产品简介:

Product introduction:
The VBsemi VBM110MR05 is a Single N-type MOSFET with up to 1000V drain-source voltage (VDS), 5A drain current (ID), and 30V gate-source voltage (VGS). Adopting Plannar technology, it has reliable performance and stable characteristics. This product is suitable for various application scenarios and provides reliable power switching solutions.

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产品参数:

Detailed parameter description:
- Model: VBM110MR05
- Brand: VBsemi
- MOSFET type: Single N
- Drain-source voltage (VDS): 1000V
- Gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance (m次) at VGS=10V: 2400
- Drain current (ID): 5A
- Technology: Plannar
-Package:TO220

领域和模块应用:

Examples of application areas and modules:
This product is suitable for the following areas and modules:
1. Power management: Power switches used in power management systems such as switching power supplies, inverters and DC-DC converters.
2. Power tools: Suitable for power control modules in industrial and household power tools such as electric drills, electric saws and electric grinding wheels.
3. Automotive electronics: used in vehicle chargers, vehicle motor drivers and power switch control in vehicle electronic systems.
4. Industrial control: suitable for power switch control modules in PLC, industrial robots and automated production lines.
5. Renewable energy: used for power conversion and control in solar inverters, wind power controllers and electrical energy storage systems.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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