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VBM1106S 产品详细

产品简介:

VBM1106S is a single N-channel MOSFET with 100V drain-source voltage tolerance. Its features include low gate-source voltage drop (Vth=2.5V), low on-resistance (as low as 7mΩ), Manufactured using Trench technology and packaged in TO220.

Suitable for fields and modules that require high voltage withstand capability, low on-resistance and stability, such as power modules, electric vehicle motor control, industrial drives and photovoltaic inverters, etc.

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产品参数:

parameter:
- Voltage parameters:
- VDS(V): 100V
- VGS(㊣V): 30V
- Vth(V): 2.5V
- Resistance parameters:
- On-resistance when VGS=10V: 7m次
- Maximum current: 120A
- Technology: Trench
Package: TO220

领域和模块应用:

for example:
1. **Power module**: VBM1106S is suitable for power switches in power modules. It can provide stable power output under high voltage and high current conditions, such as for server power supply, industrial power supply and other fields.

2. **Electric vehicle motor control**: In electric vehicles, VBM1106S can be used as a key component in the motor controller to control the motor start and stop, speed adjustment and other functions of electric vehicles to ensure the safety and efficiency of electric vehicles. run.

3. **Industrial Driver**: In industrial drivers, VBM1106S can be used as key power switching components, such as frequency converters, fan controllers, etc., to provide stable power output and current control.

4. **Photovoltaic inverter**: In solar power generation systems, VBM1106S can be used as a key component of the inverter to convert the power generated by DC solar panels into AC power to ensure the stability and stability of the inverter. efficiency.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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