MOSFET

您现在的位置 > 首页 > MOSFET

VBM1105 产品详细

产品简介:

VBM1105 is a single N-channel field effect transistor using Trench technology. It has the characteristics of 100V withstand voltage, 120A maximum drain current and medium drain-source on-resistance. The device is suitable for medium power applications , can be used in a variety of power electronic devices and power management modules.

文件下载

下载PDF 文档
立即下载

产品参数:

parameter:
- Type: Single N
- VDS (withstand voltage): 100V
- VGS (gate-source voltage, positive and negative): ㊣20V
- Vth (gate threshold voltage): 3V
- Drain-source on-resistance (m次) when VGS=10V: 5
- Maximum drain current (ID): 120A
- Technology: Trench (trench structure)
-Package:TO220

领域和模块应用:

for example:
1. Electric vehicle charging piles: VBM1105 can be used as a power switching device in electric vehicle charging piles to realize charging control and power conversion functions to ensure safe and fast charging of electric vehicles.
2. Industrial frequency converter: Among industrial frequency converters, VBM1105 can be used for power switch control of the frequency converter module to achieve motor speed control and energy-saving operation.
3. Solar inverter: used in solar inverters, VBM1105 can be used for power switch control of the inverter module to realize power conversion and grid connection of the solar power generation system.
4. LED lighting system: In LED lighting systems, VBM1105 can be used for power switch control of LED drive circuits, providing stable power supply and efficient lighting drive.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

打样申请

在线咨询

电话咨询

400-655-8788

微信咨询

一键置顶

打样申请
在线咨询
电话咨询
微信咨询