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VBM1103 产品详细

产品简介:

VBM1103 is a single N-type field effect transistor (FET) launched by VBsemi, which adopts Trench technology and has high performance and reliability. It is suitable for various high-power power management and power control applications, providing reliable power conversion and stable current driving capabilities. Such as industrial power supply, electric vehicle charger, industrial high-frequency power supply, etc.

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产品参数:

**parameter:**
- **Type:** Single N type
- **Maximum Drain-Source Voltage (VDS):** 100V
- **Maximum Gate-Source Voltage (VGS):** ㊣20V
- **Threshold Voltage (Vth):** 3V
- **On-resistance (m次) at VGS=10V:** 3m次
- **Maximum drain current (ID):** 180A
- **Technology:** Trench
- **Package:** TO220

领域和模块应用:

**Examples of application areas:**
1. **Power Inverter:** VBM1103 can be used to manufacture high-power power inverter to convert DC power into AC power, suitable for industrial power supply, UPS (uninterruptible power supply) and other applications.
2. **Electric vehicle charger:** In an electric vehicle charger, this transistor can be used to control the charger's current and voltage output, enabling fast charging and efficient energy conversion.
3. **Industrial high-frequency power module:** In industrial high-frequency power module, VBM1103 can be used as a switching tube to achieve high-frequency power conversion and stable output.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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