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VBM1101M 产品详细

产品简介:

VBsemi's VBM1101M is a single N-channel power MOSFET suitable for a variety of low-power power electronic applications. Offering high performance and reliability, it is particularly suitable for power supply and driver applications requiring high efficiency and low power.

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产品参数:

**parameter:**
- **Type:** Single N
- **Maximum Drain-Source Voltage (VDS):** 100V
- **Maximum Gate-Source Voltage (VGS):** ㊣20V
- **Threshold voltage (Vth):** 1.8V
- **Drain-source resistance (m次) at VGS=10V:** 127m次
- **Maximum drain current (ID):** 18A
- **Technology:** Trench
- **Package:** TO220

领域和模块应用:

**for example:**
1. **LED lighting module:**
VBM1101M can be used as a power switch in LED lighting modules to control the brightness and color temperature of LED lights. Its high drain-source voltage and low threshold voltage make it suitable for providing stable power drive in LED lamps, enabling efficient and energy-saving lighting solutions.

2. **Small electronic equipment module:**
In small electronic equipment modules, such as mobile phone chargers, battery management modules, etc., VBM1101M can be used as a power switching device to control changes in current and voltage. Its low power characteristics make it suitable for use in small electronic devices, helping to improve the energy efficiency and performance of the device.

3. **Power tool control module:**
As a power switching device in the power tool control module, VBM1101M can provide stable and reliable power output to control the speed and power of the power tool. Its high drain-source voltage and current capabilities support the needs of a variety of power tools, while its low threshold voltage and drain-source resistance help reduce energy losses and improve system efficiency.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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