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VBL2609 产品详细

产品简介:

VBL2609 is a single-channel P-type metal oxide semiconductor field effect transistor (MOSFET) under the VBsemi brand. The device is manufactured using trench technology. The high performance and reliability of the product enable it to be used in a variety of industrial and consumer electronics applications. important role.
The device is packaged in TO263.

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产品参数:

Has the following main parameters:

- Rated drain-source voltage (VDS): -60V
- Gate-source voltage (VGS) range: ㊣20V
- Threshold voltage (Vth): -3V
- Drain-source resistance (RDS(on)) when gate-source voltage is 4.5V: 9m次
- Drain-source resistance (RDS(on)) when gate-source voltage is 10V: 7m次
- Maximum drain current (ID): -110A

领域和模块应用:

The application of groove technology enables excellent performance in a variety of applications.
For example, in power management modules, VBL2609 can be used in DC-DC converters, power switch modules and other fields.
Its low on-resistance and high drain current make it particularly suitable for applications requiring high power density and efficiency, such as server power modules, electric vehicle controllers, etc.
In addition, its high threshold voltage and wide voltage range also make it an ideal choice for industrial control systems, medical equipment and other fields.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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