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VBL2606 产品详细

产品简介:

VBL2606 is a high-performance single P-type field effect transistor (MOSFET) launched by VBsemi. The device features reliable drain-source and gate-source voltages, as well as low threshold voltage, making it suitable for a variety of power circuit designs. Made with Trench technology, it has good conduction characteristics and stability. The TO263 package is suitable for high-power applications and has good heat dissipation performance and installation stability. It is suitable for multiple fields and modules and can meet the needs of different application scenarios.

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产品参数:

**Product model:** VBL2606
**Brand:** VBsemi
**parameter:**
- Power supply type: Single P
- Maximum drain-source voltage (VDS): -60V
- Maximum gate-source voltage (VGS): ㊣20V
- Threshold voltage (Vth): -3V
- Drain-source resistance (m次) at VGS=4.5V: 7
- Drain-source resistance (m次) at VGS=10V: 5
- Maximum drain current (ID): -120A
- Technology: Trench
**Package:** TO263

领域和模块应用:

**for example:**
1. Electric vehicle battery management module: VBL2606 can be used for battery protection and current control in the electric vehicle battery management module to ensure the safe and stable operation of the battery system and extend battery life.
2. Industrial power module: Among industrial power modules, VBL2606 is suitable for industrial power switching and regulating circuits, providing stable and reliable power output and reducing system energy consumption.
3. Wind power generation control module: Since VBL2606 has high drain current and low drain-source resistance, it can be used for power regulation and current control in wind power generation control modules to improve the efficiency and stability of the power generation system.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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