产品参数:
**VBsemi VBL2309 single P-type MOSFET**
- **Parameters:**
- Maximum drain-source voltage (VDS): -30V
- Standard gate-source voltage (VGS): ㊣20V
- Threshold voltage (Vth): -2.5V
- Drain-source resistance (m次) at VGS=4.5V: 11
- Drain-source resistance (m次) at VGS=10V: 8
- Maximum drain current (ID): -75A
- Technology: Trench
- **Package:**
- TO263
领域和模块应用:
**Application Introduction:**
VBL2309 is suitable for power supply and power control applications in many fields and has the following characteristics:
1. **Power management field:** Due to its low leakage current and high leakage voltage, VBL2309 is very suitable for use in power management applications such as switching power supplies, DC-DC converters and inverters. For example, it can be used in switching power supply modules in laptop computers and mobile phone chargers.
2. **Driver and Motor Control:** Due to its high current and low resistance characteristics, VBL2309 can be used in driver and motor control applications such as stepper motor drivers, DC motor controllers and brushless DC motor controllers. For example, used in motor driver modules in automated machinery.
3. **Automotive Electronic Systems:** Due to its high current handling capability and low leakage voltage, VBL2309 is also suitable for power control applications in automotive electronic systems, such as automotive engine control modules, electric vehicle battery management systems and on-board charging piles.
4. **LED Lighting:** In LED lighting applications, VBL2309 can be used as an LED driver and lighting control module to help realize efficient lighting systems and energy-saving LED lighting products.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性