产品简介：
Product introduction:
Model: VBL19R15S
Brand: VBsemi
Package: TO263
Features: Single N-channel field effect transistor, using SJ_Multi-EPI technology, with a drain-source voltage (VDS) of 900V, a gate-source voltage (VGS) of 30V, a threshold voltage (Vth) of 3.5V, and a maximum continuous drain current of 15A ( ID), low on-state resistance is 420mΩ (VGS=10V).
文件下载
产品参数：
Detailed parameter description:
- Transistor type: Single N-channel field effect transistor
- Drain-source voltage (VDS): 900V
- Gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- Low on-state resistance (VGS=10V): 420m次
- Maximum continuous drain current (ID): 15A
- Technology: Using SJ_Multi-EPI technology
领域和模块应用：
Applications:
This product is suitable for the following areas and modules:
1. Electric vehicle controller: Due to its high drain-source voltage and continuous drain current, it is suitable for electric vehicle controller modules to provide reliable electric vehicle control.
2. Solar inverter: It can be used in solar inverter modules to realize DC to AC conversion of solar photovoltaic panels and provide reliable power output.
3. Industrial power module: Suitable for industrial power modules, such as DC regulated power supplies and frequency converters, to provide stable power output.
4. High-voltage switching power supply: It can be used in high-voltage switching power supply modules to achieve efficient and stable switching control, such as high-voltage switching power supplies and pulse power amplifiers.
The above examples illustrate the wide range of applications of VBL19R15S products in electric vehicles, solar energy, industrial power supplies and high-voltage switching power supplies.
*请注意：以上只是示例应用场景，具体的应用取决于系统设计的要求和条件。在使用该器件时，请查阅其数据手册以获取详细的技术规格和特性
立即下载
中文
English
返回上级页面
