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VBL19R11S 产品详细

产品简介:

Product introduction:
VBsemi's VBL19R11S is a single N-channel power MOSFET, using SJ_Multi-EPI technology and packaged in TO263. This product has high voltage withstand capability and moderate on-resistance, making it suitable for a variety of power applications.

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产品参数:

Detailed parameter description:
- Product model: VBL19R11S
- Brand: VBsemi
- Type: Single N-channel power MOSFET
- Maximum drain-source voltage (VDS): 900V
- Maximum gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- At VGS=10V, drain-source resistance (m次): 580
- Maximum drain current (ID): 11A
- Technology: SJ_Multi-EPI
-Package:TO263

领域和模块应用:

Examples of applicable fields and modules:
1. Industrial power module: VBL19R11S is suitable for industrial power modules, such as frequency converters, motor drivers, etc., providing efficient and stable power output.
2. High-voltage direct current transmission system: Power switch module used in high-voltage direct current transmission system to realize the transmission and conversion of electric energy.
3. Automobile electrification system: In the field of automobile electrification, this device can be used in motor controllers, battery management systems, etc. of electric vehicles to provide efficient power control.
4. Solar inverter: In solar inverter, VBL19R11S can be used to convert the DC power output by the solar panel into AC power for household and industrial electricity.
5. Power management module: In various power management modules, this device can be used for power control, voltage regulation and other functions to improve the performance and reliability of the device.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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