产品简介：
Product introduction:
Model: VBL19R07S
Brand: VBsemi
Package: TO263
Features: Single N-channel field effect transistor, using SJ_Multi-EPI technology, has a drain-source voltage (VDS) of 900V, a gate-source voltage (VGS) of 30V, a threshold voltage (Vth) of 3.5V, and a maximum continuous drain current of 7A ( ID), low on-state resistance is 950mΩ (VGS=10V).
VBL19R07S products are widely used in solar energy, electric vehicles, industrial power supplies and high-voltage switching power supplies.
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产品参数：
Detailed parameter description:
- Transistor type: Single N-channel field effect transistor
- Drain-source voltage (VDS): 900V
- Gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- Low on-state resistance (VGS=10V): 950m次
- Maximum continuous drain current (ID): 7A
- Technology: Using SJ_Multi-EPI technology
领域和模块应用：
Applications:
This product is suitable for the following areas and modules:
1. Solar inverter: Due to its high drain-source voltage and moderate continuous drain current, it is suitable for solar inverter modules to realize DC to AC conversion of solar photovoltaic panels and provide reliable power output.
2. Electric vehicle power module: It can be used in electric vehicle power modules, such as electric vehicle controllers and electric vehicle chargers, to provide efficient and stable power output.
3. Industrial power module: Suitable for industrial power modules, such as DC regulated power supplies and frequency converters, to provide stable power output.
4. High-voltage switching power supply: It can be used in high-voltage switching power supply modules to achieve efficient and stable switching control, such as high-voltage switching power supplies and pulse power amplifiers.
*请注意：以上只是示例应用场景，具体的应用取决于系统设计的要求和条件。在使用该器件时，请查阅其数据手册以获取详细的技术规格和特性
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