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VBL18R17S 产品详细

产品简介:

Product introduction:
VBsemi's VBL18R17S is a Single N MOSFET with a drain-source voltage (VDS) of 800V, a gate-source voltage (VGS, positive and negative) of 30V, and a gate threshold voltage (Vth) of 3.5V. The device is manufactured using SJ_Multi-EPI technology and is packaged in TO263.

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产品参数:

Detailed parameter description:
- VDS (drain-source voltage): 800V
- VGS (gate-source voltage): ㊣30V
- Vth (gate threshold voltage): 3.5V
- Drain-source resistance (m次) at VGS=10V: 220
- Maximum drain current (ID): 17A

领域和模块应用:

Examples of applicable fields and modules of this product:
1. High-voltage DC regulator: The high drain-source voltage and high current characteristics of VBL18R17S make it suitable for high-voltage DC regulator modules for stable power output in industrial and power systems.
2. High-efficiency power module: In fields such as communications and data centers, VBL18R17S can be used as a power switch for high-efficiency power modules to achieve efficient energy conversion and low power consumption.
3. Medical equipment: Due to its stability and reliability, VBL18R17S can be used in medical equipment modules, such as X-ray generators and medical ultrasound machines, to provide stable power supply and high-quality signal processing.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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