产品参数:
Detailed parameter description:
- Product model: VBL18R11S
- Brand: VBsemi
- Structure: Single N-channel field effect transistor
- Maximum drain-source voltage (VDS): 800V
- Maximum gate-source voltage (VGS): 30V
- Threshold voltage (Vth): 3.5V
- Gate-source resistance (RDS(on)) (VGS=10V): 500m次
- Drain current (ID): 11A
- Technology: SJ_Multi-EPI
-Package:TO263
领域和模块应用:
Examples of product applicable areas and modules:
1. Power module: VBL18R11S has a drain-source voltage of 800V and a drain current of 11A. It is suitable for various power modules, such as industrial power supplies, UPS systems, etc., and can provide stable and reliable power output.
2. Switching power supply: Due to its low gate-source resistance and high drain-source voltage tolerance, it is suitable for switching power supplies, such as power adapters, frequency converters, etc., and can achieve efficient switching control. .
3. Motor drive: In the field of motor drive, VBL18R11S can be used as a power switching element in the motor driver to control the start, stop and speed of the motor, such as in electric vehicles, power tools and other fields.
To sum up, VBL18R11S is a field effect transistor product with stable performance and wide application, which can be widely used in fields and modules such as power supply, switch and driver.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性