产品参数:
Detailed parameter description:
- Product model: VBL18R10S
- Brand: VBsemi
- Type: Single N MOSFET
-Package: TO263
- The main parameters:
- VDS (drain-source voltage): 800V
- VGS (gate-source voltage): ㊣30V
- Threshold voltage Vth: 3.5V
- On-resistance (m次) at VGS=10V: 480
- Maximum drain current ID: 10A
- Technology: SJ_Multi-EPI
领域和模块应用:
This product is suitable for the following areas and modules:
- Solar photovoltaic inverter: Due to its high drain-source voltage and large drain current, it is suitable for DC to AC conversion of solar photovoltaic inverter, helping to convert the DC power generated by photovoltaic panels into usable of alternating current.
- Electric vehicle charging piles: The power switch module can be used in electric vehicle charging piles to realize fast charging of electric vehicles and meet the needs of the electric vehicle market for charging speed and efficiency.
- Industrial power systems: In industrial power systems, this product can be used in the output stage of high-voltage DC converters to help achieve high-efficiency DC to AC conversion.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性