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VBL18R10S 产品详细

产品简介:

The product model VBL18R10S is a Single N MOSFET launched by the brand VBsemi, and the package is TO263. It has the following main parameters: VDS (drain-source voltage) is 800V, VGS (gate-source voltage) is ±30V, and the threshold voltage Vth is 3.5V. When VGS=10V, the on-resistance (mΩ) when turned on is 480, and the maximum drain current ID is 10A. This product uses SJ_Multi-EPI technology.

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产品参数:

Detailed parameter description:
- Product model: VBL18R10S
- Brand: VBsemi
- Type: Single N MOSFET
-Package: TO263
- The main parameters:
- VDS (drain-source voltage): 800V
- VGS (gate-source voltage): ㊣30V
- Threshold voltage Vth: 3.5V
- On-resistance (m次) at VGS=10V: 480
- Maximum drain current ID: 10A
- Technology: SJ_Multi-EPI

领域和模块应用:

This product is suitable for the following areas and modules:
- Solar photovoltaic inverter: Due to its high drain-source voltage and large drain current, it is suitable for DC to AC conversion of solar photovoltaic inverter, helping to convert the DC power generated by photovoltaic panels into usable of alternating current.
- Electric vehicle charging piles: The power switch module can be used in electric vehicle charging piles to realize fast charging of electric vehicles and meet the needs of the electric vehicle market for charging speed and efficiency.
- Industrial power systems: In industrial power systems, this product can be used in the output stage of high-voltage DC converters to help achieve high-efficiency DC to AC conversion.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

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