产品简介:
Product introduction:
Model: VBL18R06SE
Brand: VBsemi
Package: TO263
Features: Single N-channel field effect transistor, using SJ_Deep-Trench technology, has a drain-source voltage (VDS) of 800V, a gate-source voltage (VGS) of 30V, a threshold voltage (Vth) of 3.5V, and a maximum continuous drain current of 6A ( ID), low on-state resistance is 750mΩ (VGS=10V).
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产品参数:
Detailed parameter description:
- Transistor type: Single N-channel field effect transistor
- Drain-source voltage (VDS): 800V
- Gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- Low on-state resistance (VGS=10V): 750m次
- Maximum continuous drain current (ID): 6A
- Technology: Using SJ_Deep-Trench technology
领域和模块应用:
Applications:
This product is suitable for the following areas and modules:
1. LED lighting driver: Due to its low on-state resistance and moderate drain-source voltage, it can be used in LED lighting driver modules to provide efficient and stable power output.
2. Power tool drive: With high drain-source voltage and continuous drain current, it is suitable for power tool drive modules and provides reliable driving power.
3. Battery management system: suitable for battery management system modules, used for battery charge and discharge control and protection to ensure the safety and reliability of the battery system.
4. Electric vehicle controller: Due to its high drain-source voltage and low on-state resistance, it can be used in electric vehicle controller modules to provide efficient and reliable electric vehicle control.
These examples illustrate the wide range of applications for VBL18R06SE products in lighting, power tools, battery management and electric vehicles.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性