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VBL185R07 产品详细

产品简介:

Product introduction:

VBL185R07 is a single N-channel MOSFET produced by VBsemi, with a drain-source voltage (VDS) of 850V, a gate-source voltage (VGS) of 30V, and a threshold voltage (Vth) of 3.3V. It adopts Plannar technology and is packaged as TO263. The product's high voltage tolerance and low on-resistance make it suitable for a variety of high-performance applications.

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产品参数:

Detailed parameter description:

- VDS (drain-source voltage): 850V
- VGS (gate-source voltage): ㊣30V
- Vth (threshold voltage): 3.3V
- On-resistance (m次) at VGS=10V: 1800m次
- Maximum drain current (ID): 7A
- Technology: Plannar
-Package: TO263

领域和模块应用:

Examples of applicable fields and modules:

1. Solar photovoltaic inverter: Due to its high drain-source voltage and low on-resistance, VBL185R07 can be used in power switches and inverter circuits in solar photovoltaic inverters to improve energy conversion efficiency.
2. Electric vehicle charging piles: Suitable for power switches and control circuits in electric vehicle charging piles to achieve efficient and fast charging.
3. Industrial high-frequency power module: Among industrial high-frequency power modules, this product can be used in switching power supplies and DC-AC converters to meet the needs of industrial equipment for stable power.
4. Medical equipment power supply: In medical equipment, VBL185R07 can be used in high-performance power modules to ensure the safe and reliable operation of medical equipment.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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