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VBL17R15SE 产品详细

产品简介:

Product introduction:
VBsemi's VBL17R15SE is a single N-channel field effect transistor manufactured using SJ_Deep-Trench technology. It has a drain-source voltage (VDS) of 700V, a gate-source voltage (VGS) of 30V, and a threshold voltage (Vth) of 3.5V. The product is packaged in TO263 and has a drain current (ID) of 15A and an on-resistance of 260mΩ (VGS=10V).

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产品参数:

Detailed parameter description:
- Product model: VBL17R15SE
- Brand: VBsemi
- Structure: Single N-channel field effect transistor
- VDS (drain-source voltage): 700V
- VGS (gate-source voltage): ㊣30V
- Vth (threshold voltage): 3.5V
- On resistance (VGS=10V): 260m次
- Drain current (ID): 15A
- Technology: SJ_Deep-Trench
-Package: TO263

领域和模块应用:

Examples of applicable fields and modules:
1. Industrial power module: Because VBL17R15SE has high drain-source voltage and drain current, it is suitable for industrial power modules, such as DC power supplies and inverters.
2. High-voltage switching module: Its drain-source voltage of 700V makes it suitable for high-voltage switching modules for switching devices in power transmission and distribution systems.
3. Chargers and inverters: The VBL17R15SE’s high voltage tolerance and large drain current make it an ideal choice in chargers and inverters for electric vehicle charging and solar inverter systems.
4. Electric vehicle driver: This product can be used in the driver module of electric vehicles to provide efficient power control and conversion to optimize the vehicle power system.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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