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VBL17R11S 产品详细

产品简介:

Product introduction: VBsemi's VBL17R11S is a single N-channel MOSFET with a drain-source voltage (VDS) of 700V, a gate-source voltage (VGS) of 30V, and a threshold voltage (Vth) of 3.5V. Manufactured using SJ_Multi-EPI technology, with TO263 package, suitable for a variety of application scenarios.

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产品参数:

Detailed parameter description:
- Voltage parameters: VDS (drain-source voltage) is 700V, VGS (gate-source voltage) is ㊣30V.
- Threshold voltage: Vth (threshold voltage) is 3.5V.
- Current parameters: When VGS=10V, the minimum resistance at turn-on is 450m次, and the maximum drain current is 11A.

领域和模块应用:

Examples of applicable fields and modules:
1. Electric vehicle charger: Due to its high voltage and current characteristics, VBL17R11S can be used as a power switch module in an electric vehicle charger to achieve fast and safe charging.
2. Industrial automation control: In industrial automation systems, this product can be used in motor drives and power control modules to ensure stable operation and efficient production of production lines.
3. Solar inverter: In a solar inverter, VBL17R11S can be used as a key switching tube to convert the DC power generated by the solar panel into AC power to supply household and commercial power.

The above is an introduction to VBsemi's VBL17R11S product, detailed parameter descriptions, and examples of applicable fields and modules.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

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* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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