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VBL17R08SE 产品详细

产品简介:

Product introduction:
The VBsemi VBL17R08SE is a single N-channel field effect transistor with a drain-to-source voltage (VDS) of up to 700V and a drain current (ID) of 8A. Manufactured with SJ_Deep-Trench technology for reliable performance and stability. The package is TO263, suitable for a variety of applications.

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产品参数:

Detailed parameter description:
- Model: VBL17R08SE
- Brand: VBsemi
- Type: Single N-channel field effect transistor
- Drain-source voltage (VDS): 700V
- Gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance (m次) at VGS=10V: 540
- Drain current (ID): 8A
- Process technology: SJ_Deep-Trench
-Package: TO263

领域和模块应用:

Examples of applicable fields and modules:
1. Power module: Due to its high drain voltage and reliability, it is suitable for applications such as switching power supplies and DC-DC converters.
2. Medical equipment: It can be used in power management and driver modules in medical equipment to ensure the stable operation of the equipment.
3. Industrial automation: Suitable for power switch modules in industrial automation systems to improve the efficiency and reliability of production equipment.
4. Solar inverter: The switch module used in the solar inverter converts the DC output of the solar panel into alternating current.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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