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VBL17R02 产品详细

产品简介:

Product introduction:
VBL17R02 is a Single N-type field effect transistor produced by VBsemi, manufactured using Plannar technology, and packaged in TO263. The product features a drain-source voltage (VDS) of up to 700V, a gate-source voltage (VGS) of 30V, and a threshold voltage (Vth) of 3.2V. Its on-resistance is 6500mΩ when the gate-source voltage is 10V, and the maximum drain current (ID) is 2A.

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产品参数:

Detailed parameter description:
- Product model: VBL17R02
- Brand: VBsemi
- Type: Single N-type field effect transistor
- Maximum drain-source voltage (VDS): 700V
- Gate-source voltage (VGS): 30V (positive and negative)
- Threshold voltage (Vth): 3.2V
- On-resistance when gate-source voltage is 10V: 6500m次
- Maximum drain current (ID): 2A
- Technology: Plannar
-Package:TO263

领域和模块应用:

Examples of product applicable fields and modules:
1. Power management module: The low drain current and high withstand voltage characteristics of VBL17R02 make it suitable for various low-power power management modules, such as power adapters, battery chargers, etc.
2. LED lighting driver: Because VBL17R02 has low on-resistance and high withstand voltage characteristics, it can be used as a power switching device in LED lighting driver circuits to improve the stability and efficiency of LED lamps.
3. Industrial automation control: It can be used in switch control modules in various industrial automation equipment, such as PLC, frequency converters, etc., to improve the performance and reliability of the equipment.
4. Solar photovoltaic inverter: suitable for power switch modules in solar photovoltaic inverters to improve the conversion efficiency and stability of the system and achieve efficient utilization of solar energy.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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