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VBL16R34SFD 产品详细

产品简介:

Product introduction:

VBsemi's VBL16R34SFD is a single N-type MOSFET with a drain-source voltage (VDS) of 600V, a gate-source voltage (VGS, positive and negative) of 30V, and a threshold voltage (Vth) of 3.5V. It uses SJ_Multi-EPI technology and is packaged as TO263.

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产品参数:

Detailed parameter description:

- Drain-source voltage (VDS): 600V
- Gate-source voltage (VGS, positive and negative): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance at VGS=10V (m次): 80
- Maximum drain current (ID): 34A

领域和模块应用:

Examples of applicable fields and modules:

- Solar Inverters: Due to its high voltage tolerance and high drain current, it is suitable for power conversion and current control in solar inverters.
- Industrial automation systems: Can be used for power switches, motor control and power management in industrial automation systems to ensure efficient operation of the system.
- Electric vehicle charger: In an electric vehicle charger, it can be used as a switching tube to achieve efficient energy conversion and battery charge management.
- High-performance power module: Suitable for high-performance power module, used for voltage conversion and power control to ensure system stability and reliability.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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