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VBL16R20S 产品详细

产品简介:

Product introduction:

VBsemi's VBL16R20S is a single N-type MOSFET with a drain-source voltage (VDS) of 600V, a gate-source voltage (VGS, positive and negative) of 30V, and a threshold voltage (Vth) of 3.5V. It uses SJ_Multi-EPI technology and is packaged as TO263.

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产品参数:

Detailed parameter description:

- Drain-source voltage (VDS): 600V
- Gate-source voltage (VGS, positive and negative): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance (m次) at VGS=10V: 190
- Maximum drain current (ID): 20A

领域和模块应用:

Examples of applicable fields and modules:

- Low-power power module: Suitable for power switches and power control in low-power power modules, such as small home appliances, consumer electronics, etc.
- Lighting controller: used for switching power supply and current control in LED lighting systems to achieve efficient lighting control and energy saving.
- Medical equipment: In medical equipment, it can be used as a switching tube to achieve power management and equipment control to ensure the stability and safety of the equipment.
- Smart home system: Suitable for power management and device control in smart home systems, such as smart sockets, smart switches, etc., to enhance the intelligence and convenience of home life.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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