MOSFET

您现在的位置 > 首页 > MOSFET

VBL16R11SE 产品详细

产品简介:

Product introduction:
VBL16R11SE is a Single N-type MOSFET produced by VBsemi, manufactured using SJ_Deep-Trench technology. The device has a drain-to-source voltage (VDS) of 600V, a gate-source voltage (VGS) of 30V, and a gate threshold voltage (Vth) of 3.5V. Its package is TO263.

文件下载

下载PDF 文档
立即下载

产品参数:

Detailed parameter description:
- Drain-source voltage (VDS): 600V
- Gate-source voltage (VGS): ㊣30V
- Gate threshold voltage (Vth): 3.5V
- Drain-source resistance (m次) at 10V gate voltage: 310m次
- Maximum drain current (ID): 11A
- Technology: SJ_Deep-Trench

领域和模块应用:

Application example:
- Power module: VBL16R11SE is suitable for various power modules, such as switching power supplies, inverters and frequency converters, and can be used in industrial, automotive and home electronic equipment.
- LED driver: As a key component in LED lighting systems, this device can be used for power switching and dimming functions in LED drivers, providing efficient power management and control.
- Electric vehicle controller: Due to its high voltage and high current characteristics, VBL16R11SE is suitable for power switches and inverters in electric vehicle controllers, which can effectively drive electric motors and achieve energy conversion.
- Industrial Automation: In the field of industrial automation, the device can be used to control high-power equipment and perform industrial automation tasks such as motor control and sensor interfacing.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

打样申请

在线咨询

电话咨询

400-655-8788

微信咨询

一键置顶

打样申请
在线咨询
电话咨询
微信咨询