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VBL16R11S 产品详细

产品简介:

Product introduction:

VBL16R11S is a single N-channel MOSFET launched by the VBsemi brand, with a drain-source voltage (VDS) of 600V, a gate-source voltage (VGS) of 30V, and a threshold voltage (Vth) of 3.5V. It uses SJ_Multi-EPI technology and is packaged as TO263.

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产品参数:

Detailed parameter description:

- Product model: VBL16R11S
- Brand: VBsemi
- Type: Single N-channel MOSFET
- VDS (drain-source voltage): 600V
- VGS (gate-source voltage): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance when VGS=10V: 380m次
- Maximum drain current (ID): 11A
- Technology: SJ_Multi-EPI
-Package:TO263

领域和模块应用:

Examples of applicable fields and modules:

1. Automotive electronics: VBL16R11S can be used in automotive electronic modules, such as engine control units (ECUs), on-board chargers and electric vehicle power modules, to achieve vehicle power control and electrical system stability.
2. Industrial automation: In industrial control systems, this MOSFET is suitable for modules such as motor drives, switching power supplies, and power inverters to control the operation and energy conversion of various industrial equipment.
3. Solar power generation: Used in solar inverter modules to convert DC power generated by solar panels into AC power to power homes and commercial purposes.
4. LED lighting: In LED lighting systems, VBL16R11S can be used in LED driver modules to achieve brightness adjustment and energy-saving control of LED lights, suitable for indoor and outdoor lighting applications.

The above are examples of application of VBL16R11S products in different fields and modules.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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