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VBL16R11 产品详细

产品简介:

Product introduction:
VBL16R11 is a single N-channel MOSFET model produced by VBsemi. It has a drain-source voltage (VDS) of 600V, a gate-source voltage (VGS) of 30V, a gate threshold voltage (Vth) of 3.5V, and a drain current (ID) of 11A. Manufactured using Plannar technology and packaged as TO263.

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产品参数:

Detailed parameter description:
- Drain-source voltage (VDS): 600V
- Gate-source voltage (VGS): 30V
- Gate threshold voltage (Vth): 3.5V
- On-resistance (m次) when VGS=10V: 800
- Drain current (ID): 11A
- Technology: Plannar

领域和模块应用:

Examples of applicable fields and modules:
1. Power management: VBL16R11 is suitable for various types of power management circuits, including switching power supplies, DC-DC converters and inverters, and is widely used in industrial equipment, communication equipment and consumer electronics products.
2. Electric vehicle charging piles: As a power switching device in charging piles, this type of MOSFET can be used to control power conversion and regulation in electric vehicle charging piles, providing efficient and stable charging functions.
3. Solar inverter: In solar power generation systems, VBL16R11 can be used for power conversion and control in solar inverters to achieve effective conversion and utilization of solar energy.
4. Industrial automation equipment: used in motor drive and control modules in industrial automation equipment to improve the performance and reliability of the equipment and achieve precise motion control.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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