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VBL16R10S 产品详细

产品简介:

Product introduction:
VBsemi's VBL16R10S model is a single N-channel MOSFET with a drain-source voltage (VDS) of 600V, a gate-source voltage (VGS) of 30V, and a threshold voltage (Vth) of 3.5V. This model is manufactured using SJ_Multi-EPI technology and packaged in TO263, which is suitable for various application scenarios.

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产品参数:

Detailed parameter description:
- Drain-source voltage (VDS): 600V
- Gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- Drain-source resistance (m次) at VGS=10V: 450
- Drain current (ID): 10A
- Technology: SJ_Multi-EPI

领域和模块应用:

Application example:
The product is suitable for multiple areas and modules, such as:
1. Power converter: Due to its stability and reliability, it can be used in the design of various power converters and inverters.
2. Electric vehicle charger: With sufficient drain-source current and high voltage tolerance, it is suitable for the design of electric vehicle charger.
3. Industrial control system: It can be used as a switching device in industrial control systems to achieve efficient motor control and regulation.
4. Solar inverter: Due to its high voltage tolerance and reliability, it can be used in the design of solar inverters to realize the conversion and utilization of solar energy.

These are just some examples, actual application depends on specific design and requirements.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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