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VBL16R07S 产品详细

产品简介:

Product introduction:
VBsemi's VBL16R07S is a single N-channel field effect transistor (Single N) product. Its key features include a drain-source voltage (VDS) of 600V, a gate-source voltage (VGS) of 30V, a threshold voltage (Vth) of 3.5V, and a drain current (ID) of 7A. It adopts SJ_Multi-EPI technology and is packaged as TO263.

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产品参数:

Detailed parameter description:
- Drain-source voltage (VDS): 600V
- Gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance (m次) at VGS=10V: 650
- Drain current (ID): 7A
- Technology: SJ_Multi-EPI
-Package:TO263

领域和模块应用:

Examples of application areas and modules:
1. Power inverter module: Because VBL16R07S has a high drain-source voltage and low on-resistance, it is suitable for the design of power inverter modules, such as solar inverters, industrial inverters, etc.
2. Electric vehicle charging piles: Its high withstand voltage and moderate drain current characteristics make it suitable for the power switch module of electric vehicle charging piles.
3. LED lighting driver: Since the TO263 package is suitable for high power density applications, VBL16R07S can be used as the power switch module of the LED lighting driver, providing high efficiency and reliability.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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