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VBL16R04 产品详细

产品简介:

Product introduction:

VBsemi's VBL16R04 is a single N-type MOSFET with a drain-source voltage (VDS) of 600V, a gate-source voltage (VGS, positive and negative) of 30V, and a threshold voltage (Vth) of 3.5V. It uses Plannar technology and is packaged as TO263.

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产品参数:

Detailed parameter description:

- Drain-source voltage (VDS): 600V
- Gate-source voltage (VGS, positive and negative): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance (m次) at VGS=10V: 2000
- Maximum drain current (ID): 4A

领域和模块应用:

Examples of applicable fields and modules:

- Low-power power module: Suitable for power switches and power control in low-power power modules, such as small home appliances, consumer electronics, etc.
- LED lighting driver: In the LED lighting system, it can be used as the switching tube of the LED driver to realize the control and adjustment of the LED light source and improve the energy efficiency and stability of the lighting system.
- Electric vehicle charger: It can be used for power conversion and current control in electric vehicle chargers to achieve fast charging and efficient energy conversion of electric vehicles.
- Industrial control system: Suitable for power switches and motor control in industrial control systems, such as PLC, servo drives, etc.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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