MOSFET

您现在的位置 > 首页 > MOSFET

VBL16R01 产品详细

产品简介:

Product introduction:
VBL16R01 is a Single N-type MOSFET produced by VBsemi, manufactured using Plannar technology. The device has a drain-to-source voltage (VDS) of 600V, a gate-source voltage (VGS) of 30V, and a gate threshold voltage (Vth) of 3.5V. Its package is TO263.

文件下载

下载PDF 文档
立即下载

产品参数:

Detailed parameter description:
- Drain-source voltage (VDS): 600V
- Gate-source voltage (VGS): ㊣30V
- Gate threshold voltage (Vth): 3.5V
- Drain-source resistance (m次) at 10V gate voltage: 6500m次
- Maximum drain current (ID): 1A
- Technology: Plannar

领域和模块应用:

Application example:
- Low power power module: VBL16R01 is suitable for low power power modules, such as small switching power supplies and inverters, which can be used in home electronic equipment, LED lighting, etc.
- Signal Processors: Due to its low drain current and high drain-source resistance, this device is suitable for use in power switches and amplifiers in signal processors.
- Power tools: In power tools, the VBL16R01 can be used to drive low-power motors and perform control tasks such as speed regulation and reverse control.
- Communication equipment: This device can be used for power management and signal conditioning in communication equipment, such as small wireless routers and communication modules.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

打样申请

在线咨询

电话咨询

400-655-8788

微信咨询

一键置顶

打样申请
在线咨询
电话咨询
微信咨询