Product introduction: VBL165R36S is a VBsemi brand single N-type field effect transistor, which is packaged as TO263 using SJ_Multi-EPI technology. Features 650V drain-source voltage (VDS), 30V gate-source voltage (VGS), 3.5V threshold voltage (Vth), 75mΩ (VGS=10V) on-resistance, and 36A drain current (ID) .
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Detailed parameter description:
- Drain-source voltage (VDS): 650V
- Gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance when gate-source voltage is 10V: 75m次
- Drain current (ID): 36A
- Technology: SJ_Multi-EPI
-Package:TO263
Examples of applicable fields and modules:
1. Electric vehicle drive system: Due to its high drain-source voltage and moderate drain current, it can be used in motor driver modules of electric vehicles to achieve high-efficiency power conversion.
2. Power inverter: suitable for solar inverters, wind power inverters and other fields, converting DC power into AC power and injecting it into the power grid.
3. Industrial power supply: It can be used as a power supply module for industrial equipment to provide stable DC power.
4. Smart home system: In smart home systems, it can be used in power switch modules to realize intelligent control and management of home appliances.
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