产品参数:
Detailed parameter description:
- Product model: VBL165R25SE
- Brand: VBsemi
- Type: Single N-channel power field effect transistor (MOSFET)
- Technology: SJ_Deep-Trench
- Drain-source voltage (VDS): 650V
- Gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance (m次) when gate-source voltage is 10V: 115m次
- Drain current (ID): 25A
-Package: TO263
领域和模块应用:
Examples of application areas and modules:
This product is suitable for the following areas and modules:
1. Power management module: Due to its high drain-source voltage and drain current capabilities, it can be used in power management modules such as switching power supplies, inverters and DC-DC converters.
2. Electric vehicle charging piles: It has high voltage and current bearing capacity and is suitable for power regulation and switch control in electric vehicle charging piles.
3. Industrial motor drive: It can be used for power switching and current control in industrial motor drive systems to improve system efficiency and performance.
4. Solar inverter: Inverter used in solar photovoltaic systems to convert solar power into AC power and provide it to household and industrial power systems.
These are just to name a few, the product can also be used in other fields and modules that require high performance power switches.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性